Design of an LNA in 0.18 μm CMOS Technology with a Flat and High Gain Covering Full Ultrawideband for Low Power Applications
نویسندگان
چکیده
In this paper an ultrawideband low noise amplifier is proposed. The structure is based on 0.18 μm CMOS technology. The design is based on the current reusing structure to provide the wide band characteristics. A wideband flat gain (S21) about 20dB is achieved, stability of the structure over the whole desired frequency range is provided. Due to careful selection of the elements and biasing conditions, total power consumption of the topology from a 1.8 v supply is 3.4 mw. Another specific characteristic of the design is the comparatively low noise figure, less than 1.7 dB over the whole band of frequency.
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